Q1.An N-type Ge is obtained on doping the Ge- crystal with
Answer : Option CExplaination / Solution:
The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor.
Q3.The increasing order of speed of data access for the following devices is
i. Cache Memory
ii. CDROM
iii. Dynamic RAM
iv. Processor Registers
v. Magnetic Tape
Answer : Option BExplaination / Solution: No Explaination.
Q4.The electron and hole concentrations in an intrinsic semiconductor are ni per cm3 at 300 K. Now, if acceptor impurities are introduced with a concentration
of NA per cm3
(where NA >> ni , the electron concentration per cm3 at 300 K
will be
Answer : Option DExplaination / Solution:
As per mass action law
Q7.For a charged conductor of arbitrary shape, inside the conductor
Answer : Option CExplaination / Solution: The electric field on the surface of a hollow conductor is maximum and it drops to zero abruptly inside the conductor. SinceE=−dVdr, the potential difference between any two points inside the hollow conductor is zero. This means that the potential at all points inside the hollow charged conductor is same and it is equal to the value of the potential at its surface.
Answer : Option BExplaination / Solution:
Current density J = I/A
In electromagnetism, current density is the electric current per unit area of cross section. It is a vector and has a direction along the area vector.
Q10.A circular coil of radius R carries an electric current. The magnetic field due to the coil at a point on the axis of the coil located at a distance r from the center of the coil such that r>>R, varies as
Answer : Option BExplaination / Solution: At a point distance r from the coil, the magnetic field is Br=μ0NIR22(R2+r2)12. If r>>RR is neglected in the denominatorBr=μ0NIR2r3;B∝1r3
Total Question/Mark :
Scored Mark :
Mark for Correct Answer : 1
Mark for Wrong Answer : -0.5
Mark for Left Answer : 0