Electrical Engineering - Online Test
Q1. A plane wave having the electric field components 
V/m and traveling in free space is incident normally on a lossless medium with 
which occupies the region y ≥ 0. The reflected magnetic field component is given by
V/m and traveling in free space is incident normally on a lossless medium with which occupies the region y ≥ 0. The reflected magnetic field component is given by
Answer : Option A
Explaination / Solution:
In the given problem
Reflection coefficient
negative So magnetic field component does not change its direction Direction of incident magnetic field
So, reflection magnetic field component
Q2. The minimum value of the function f(x) = x3 - 3x2 - 24x +
100 in the interval [-3. 3] is
Answer : Option B
Explaination / Solution:
Q3. Nyquist plot of two functions G1(s) and G2(s) are shown in figure.
Nyquist plot of the product of G1(s) and G2(s) is
Answer : Option B
Explaination / Solution:
Q4. The value of the integral
over the contour |z| = 1, taken in the anti-clockwise direction, would be
Answer : Option B
Explaination / Solution:
Q5. In a 100 bus power system, there are 10 generators. In a particular iteration of Newton Raphson load flow technique (in polar coordinates), two of the PV buses are converted to PQ type. In this iteration,
Answer : Option A
Explaination / Solution:
Q6. Consider a system consisting of a synchronous generator working at a lagging power factor, a synchronous motor working at an overexcited condition and a directly grid-connected induction generator. Consider capacitive VAr to be a source and inductive VAr to be a sink of reactive power. Which one of the following statements is TRUE?
Answer : Option A
Explaination / Solution:
Q7. The output expression for the Karnaugh map shown below is
Answer : Option D
Explaination / Solution:
Q8. In the design of a single mode step index optical fibre close to upper cut-off, the single-mode operation is not preserved if
Answer : Option C
Explaination / Solution:
No Explaination.
Q9. At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is
Answer : Option A
Explaination / Solution:
At room temperature mobility of electrons for Si sample is given μn = 1350 cm2/V-s For an n-channel MOSFET to create an inversion layer of electrons, a large positive gate voltage is to be applied. Therefore, induced electric field increases and mobility decreases.
So, Mobility μn <1350 cm2/V-s for n-channel MOSFET
Q10. 
Assuming the OP-AMP to be ideal, the voltage gain of the amplifier shown below is
Answer : Option A
Explaination / Solution:
