When a diode is connected in a Reverse Bias condition, a positive voltage is applied to the N-type material and a negative voltage is applied to the P-type material.

The positive voltage applied to the N-type material attracts electrons towards the positive electrode and away from the junction, while the holes in the P-type end are also attracted away from the junction towards the negative electrode.
The net result is that the depletion layer grows wider due to a lack of electrons and holes and presents a high impedance path, almost an insulator. The result is that a high potential barrier is created thus preventing current from flowing through the semiconductor material
A stone thrown from the top of a building is given an initial velocity of 20.0 m/s straight upward. The height of the building is 50.0 m. determine the velocity in m/sec when the stone hits the ground. g =9.8 m /
When the stone ll reach at the same point from where is was thrown it ll have same velocity but with opposite sign.
So initial velocity u = -20 m/s
Final velocity before hitting ground = v
Distance covered s = 50 m
Acceleration due to gravity a = 9.8 m/s2
We know
As this velocity is in opposite direction is initial velocity so sign ll be negative.
v = -37.1 m/s