
in kW offered by the n-channel
MOSFET M shown in the figure below, at a bias point of VB = 2V is (device
data for M: device transconductance parameter
, threshold voltage VTN = 1V, and neglect body effect and channel length
modulation effects)
and body effect
and channel length modulation effect are to be neglected. The lower cutoff
frequency in HZ of the circuit is approximately at

the fundamental frequency in rad/s








in the circuit, we have the reactance.