The resistance in the arm CAD RCAD = 4 + 6 = 10Omega .
The resistance in the arm CBD RCBD = 6 + 4 = 10Omega
Since the resistances in both the arms are equal, the current splits equally in the arms.ICAD = ICBD = 4/2 = 2A.
The potential difference across A and C.VAC = VA - VC = ICAD * RAC = 2 * 4 = 8V
potential difference across B and C VBC = VB - VC = ICBD * RBC = 2 * 6 = 12V.The potential difference across A and B VBA = VB - VA = VBC - VAC = 12 - 8 = 4V.
Point B is at a higher potential when compared to A.
The number of carriers in the conduction and valence band with no externally applied bias is called the equilibrium carrier concentration.
For majority carriers, the equilibrium carrier concentration is equal to the intrinsic carrier concentration plus the number of free carriers added by doping the semiconductor. Under most conditions, the doping of the semiconductor is several orders of magnitude greater than the intrinsic carrier concentration, such that the number of majority carriers is approximately equal to the doping.
At equilibrium, the product of the majority and minority carrier concentration is a constant, and this is mathematically expressed by the Law of Mass Action.
Where ni is the intrinsic carrier concentration and neand ph are the electron and hole equilibrium carrier concentrations.
Electric field intensity of a charge at a point is given by the force exerted by that charge on test charge or unit charge at that point
That is The electric field intensity of charge q is